2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st.
Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source.
Suitable for low signal load switch Outline MPAK 3 1 2 D 1.
Source 2.
Gate 3.
Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 100 µs, duty cycle ≤ 10 % 2.
Marking is “ZE–”.
Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 0.
2 0.
4 0.
2 150 ...

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