Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.
4 unit: mm 1.
6±0.
15 0.
8±0.
1 0.
4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.
6±0.
1 1.
0±0.
1 0.
5 1 0.
5 3 2 0.
45±0.
1 0.
3 0.
75±0.
15 Parameter Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG PD Tch Tstg Ratings −40 −40 ±1 10 125 125 −55 to +125 Unit V V mA mA mW °C °C 1: Source...

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