Part Number
|
2SK3211S |
Manufacturer
|
Hitachi Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999...
|
Datasheet
|
2SK3211S
|
Overview
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd.
Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP *
3 3 2
Ratings 200 ±20 25 100 25 25 41 100 150 –55 to +150
U...
Similar Datasheet