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2SK3211L

Renesas
Part Number 2SK3211L
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description 2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ...
Datasheet PDF File 2SK3211L PDF File

2SK3211L
2SK3211L

Overview
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.
4.
00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1.
Gate 2.
Drain 3.
Source 4.
Drain Rev.
4.
00 May 15, 2006 page 1 of 8 2SK3211(L), 2SK3211(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 200 ±20 25 100 25 25 41 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 ±20 — — 1.
0 — — 18 — — — — — — — — — Typ — — — — — 60 65 30 2420 790 340 20 230 590 330 0.
95 230 Max — — ±10 10 2.
5 75 85 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 VNote4 ID = 15 A, VGS = 4 V Note4 ID = 15 A, VD...


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