Part Number
|
2SK3560 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Power MOSFETs
2SK3560
Silicon N-channel power MOSFET
For PDP/For high-speed switching ■ Features
• Low on-resistance, l...
|
Datasheet
|
2SK3560
|
Overview
Power MOSFETs
2SK3560
Silicon N-channel power MOSFET
For PDP/For high-speed switching ■ Features
• Low on-resistance, low Qg • High avalanche resistance
10.
1±0.
3 (1.
4) 10.
5±0.
3 4.
6±0.
2 1.
4±0.
1
Unit: mm
0.
6±0.
1 1.
4±0.
1 0.
8±0.
1 2.
54±0.
3 2.
5±0.
2 (10.
2) (8.
9) 1 2 3 (6.
4) (1.
4) (2.
1)
3.
0±0.
5 0 to 0.
5
■ Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Ta = 25°C Tch Tstg Symbol VDSS VGSS ID IDP PD Rating 230 ±30 30 120 50 3 150 −55 to +150 °C °C Unit V V A A W
0 to 0.
3
1: Gate 2: Drain 3: Source
TO-220C-G1 Package
Channel temperature Storage temperature
Internal Connection
D G S
■...
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