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2SC5810

NPN Transistor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5810 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) ...

Toshiba Semiconductor

View 2SC5810 Datasheet

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