Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
IRF630, IRF630S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 9 A
g
RDS(ON) ≤ 400 mΩ
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor using Trench technology, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 (D2PAK) surface mou...