Part Number
|
IRF7317 |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 9.1568B
PRELIMINARY
l l l l l
IRF7317
HEXFET® Power MOSFET
D1 D1 D2 D2
Generation V Technology Ultra Low On-Resi...
|
Datasheet
|
IRF7317
|
Overview
PD - 9.
1568B
PRELIMINARY
l l l l l
IRF7317
HEXFET® Power MOSFET
D1 D1 D2 D2
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
N -C H A N N EL M O S FET 1 8
N-Ch VDSS 20V
P-Ch -20V
2
7
3
6
4
5
P -C H AN N E L MO S FET
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of appli...
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