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IRF7301

International Rectifier
Part Number IRF7301
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1238C IRF7301 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel...
Datasheet PDF File IRF7301 PDF File

IRF7301
IRF7301

Overview
PD - 9.
1238C IRF7301 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V RDS(on) = 0.
050Ω 3 6 4 5 T o p V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.
8W is possible in a typical PCB mount application.
S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ,TSTG 10 Sec.
Pulsed Drain Current, VGS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max.
5.
7 5.
2 4.
1 21 2.
0 0.
016 ± 12 5.
0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter Rθ JA Maximum Junction-to-Ambient„ Typ.
––– Max.
62.
5 Units °C/W 8/25/97 IRF7301 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductan...


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