Part Number
|
IRF7379 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 91625
IRF7379
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half B...
|
Datasheet
|
IRF7379
|
Overview
PD - 91625
IRF7379
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
N -C H A N N EL M O S FET 1 8
D1 D1 D2 D2
N-Ch VDSS 30V
P-Ch -30V
2
7
3
6
4
5
P -C H AN N E L MO S FET
RDS(on) 0.
045Ω 0.
090Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety o...
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