July 2001
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
VDS (V) = 30V ID = 6.
4A RDS(ON) 24mΩ (VGS = 10V) RDS(ON) 30mΩ (VGS = 4.
5V) RDS(ON) 40mΩ (VGS = 2.
5V) RDS(ON) 70mΩ (VGS = 1.
8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1
D1
D2
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted...