MJD31/31C —
NPN Epitaxial Silicon
Transistor
MJD31/31C
NPN Epitaxial Silicon
Transistor
Features
• General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C
February 2012
1 D-PAK 1 I-PAK 1.
Base 2.
Collector 3.
Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage : MJD31 : MJD31C
VCEO
Collector-Emitter Voltage : MJD31 : MJD31C
VEBO IC ICP IB PC
TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Collector Dis...