SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS® Power-
Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID
P- TO263 -3-2
55 5.
5 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPP80N06S2-H5 SPB80N06S2-H5
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6052 Q67060-S6053
Marking 2N06H5 2N06H5
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC=25°C
Value 80 80
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 700 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω...