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SPB80N06S2-H5

Infineon Technologies
Part Number SPB80N06S2-H5
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPP80N06S2-H5 SPB80N06S2-H5 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transisto...
Datasheet PDF File SPB80N06S2-H5 PDF File

SPB80N06S2-H5
SPB80N06S2-H5

Overview
www.
DataSheet4U.
com SPP80N06S2-H5 SPB80N06S2-H5 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 5.
5 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-H5 SPB80N06S2-H5 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6052 Q67060-S6053 Marking 2N06H5 2N06H5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 700 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.
DataSheet4U.
com SPP80N06S2-H5 SPB80N06S2-H5 Symbol min.
Values typ.
0.
34 max.
0.
5 62 62 40 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = V DS ID=230µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.
01 1 1 4.
6 1 100 100 5.
5 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A 1Current limited by bondwire ; with an RthJC = 0.
5K/W the chip is able to carry ID= 156A at 25°C, for detailed information see app.
-note ANPS071E available at www.
infineon.
com/optimos 2Defi...


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