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SPB80N06S2-07

Infineon Technologies
Part Number SPB80N06S2-07
Manufacturer Infineon Technologies
Description Power-Transistor
Published Mar 27, 2009
Detailed Description www.DataSheet4U.com SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS® Power-Transistor Feature • N-Channel Product S...
Datasheet PDF File SPB80N06S2-07 PDF File

SPB80N06S2-07
SPB80N06S2-07

Overview
www.
DataSheet4U.
com SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 55 6.
6 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-07 SPB80N06S2-07 SPI80N06S2-07 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S6024 Q67060-S6026 Q67060-S6037 Marking 2N0607 2N0607 2N0607 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 530 25 6 ±20 250 -55.
.
.
+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.
DataSheet4U.
com SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
4 max.
0.
6 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = V DS ID=180µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.
01 1 1 5.
6 1 100 100 6.
6 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=68A 1Current limited by bondwire ; with an RthJC = 0.
6K/W the chip is able to carry ID= 135A at 25°C, ...


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