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SPB80N06S2-08

Infineon Technologies
Part Number SPB80N06S2-08
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) I...
Datasheet PDF File SPB80N06S2-08 PDF File

SPB80N06S2-08
SPB80N06S2-08

Overview
SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 55 8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S4283 Q67060-S4284 Q67060-S7430 Marking 2N0608 2N0608 2N0608 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 450 21.
5 6 ±20 215 -55.
.
.
+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
46 max.
0.
7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = V DS ID=150µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, 125°C, 2) µA 0.
01 1 1 6.
5 1 100 100 8 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=58A 1Current limited by bondwire ; with an RthJC = 0.
7K/W the chip is able to carry ID= 109A at 25°C, for detailed information see app.
-note AN...


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