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SPB80N06S2-05

Infineon Technologies
Part Number SPB80N06S2-05
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPP80N06S2-05 SPB80N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ...
Datasheet PDF File SPB80N06S2-05 PDF File

SPB80N06S2-05
SPB80N06S2-05

Overview
SPP80N06S2-05 SPB80N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 55 4.
8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-05 SPB80N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4245 Q67040-S4255 Marking 2N0605 2N0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 810 30 6 ±20 300 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 SPP80N06S2-05 SPB80N06S2-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
3 max.
0.
5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.
1 Values typ.
3 max.
4 Unit V Gate threshold voltage, VGS = V DS ID=250µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.
01 1 1 1 100 100 nA mΩ 4.
1 3.
8 5.
1 4.
8 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance4) V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.
5K/W the chip is able to carry ID= 170A at 25°C, for detailed information see app.
-note ANPS071E available at www.
infineon.
com...


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