PD - 91593A
IRG4BC30S
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Standard: optimized for minimum saturation voltage and low operating frequencies ( 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
4V
@VGE = 15V, IC = 18A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM IL...