DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3573
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5 ORDERING INFORMATION
PART NUMBER 2SK3573 2SK3573-S 2SK3573-ZK 2SK3573-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note
FEATURES
• 4.
5 V drive available • Low on-state resistance RDS(on)1 = 4.
0 mΩ MAX.
(VGS = 10 V, ID = 42 A) • Low gate charge QG = 68 nC TYP.
(VDD = 16 V, VGS = 10 V, ID = 83 A) • Surface mount device available
Note TO-220SMD package is produced only in Japan...