2SC6033
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC6033
Unit : mm
High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications
ＴＳＭ
0 .
9 5 0 .
9 5
2.
9± 0 .
2 1.
9± 0.
2
• • •
High DC current gain: hFE = 250 to 400 (IC = 0.
3 A) Low collector-emitter saturation: VCE (sat) = 0.
18 V (max) High-speed switching: tf = 38 ns (typ.
)
1 2 3
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10s DC DC Pulse
VCBO VCEX VCEO VEBO IC ICP IB Pc (Note 1) Tj Tstg
100 80 50 6 2.
5 5 0.
3 1.
00 0.
625 150 −55 to 150
V V V V A A W °C °C
2
1.
Ba...