SSM3K02F
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K02F
High Speed Switching Applications
· · · Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.
5 V) Low gate threshold voltage: Vth = 0.
6~1.
1 V (VDS = 3 V, ID = 0.
1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating 30 ±10 1.
0 A 2.
0 200 150 -55~150 mW °C °C Unit V V
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1F
Weight: 0.
012 g (typ.
)
Marking
Equivalent Circuit
Handling Precaution
When handling ...