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SSM3K01T

Toshiba Semiconductor
Part Number SSM3K01T
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 28, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: ...
Datasheet PDF File SSM3K01T PDF File

SSM3K01T
SSM3K01T

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: mm • Small Package • Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.
5 V) • Low Gate Threshold Voltage: Vth = 0.
6 to 1.
1 V (@VDS = 3 V, ID = 0.
1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 3.
2 IDP (Note 2) 6.
4 A Drain power dissipation (Ta = 25°C) PD (Note 1) 1250 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of JEITA ― high temperature/current/voltage and the significant change in TOSHIBA 2-3S1A temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 10 mg (typ.
) operating temperature/current/...


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