DatasheetsPDF.com

SSM3K02T

Toshiba Semiconductor
Part Number SSM3K02T
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications
Published Sep 11, 2008
Detailed Description SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications • • • Sm...
Datasheet PDF File SSM3K02T PDF File

SSM3K02T
SSM3K02T

Overview
SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications • • • Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.
5 V) Low gate threshold voltage: Vth = 0.
6~1.
1 V (VDS = 3 V, ID = 0.
1 mA) w w w .
D a t a S h e e t 4 U .
c o m Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±10 2.
5 5.
0 1250 150 −55~150 Unit V V A mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC JEITA ― ― Note: Using continuously under heavy loads...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)