Part Number
|
IRLML6401 |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Oct 19, 2005 |
Detailed Description
|
PD - 93756D
IRLML6401
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (1.1mm) Ava...
|
Datasheet
|
IRLML6401
|
Overview
PD - 93756D
IRLML6401
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (1.
1mm) Available in Tape and Reel Fast Switching 1.
8V Gate Rated
HEXFET® Power MOSFET
G 1
VDSS = -12V
3 D S 2
RDS(on) = 0.
05Ω
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporat...
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