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IRLML6401

Part Number IRLML6401
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 19, 2005
Detailed Description PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (1.1mm) Ava...
Datasheet IRLML6401




Overview
PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (1.
1mm) Available in Tape and Reel Fast Switching 1.
8V Gate Rated HEXFET® Power MOSFET G 1 VDSS = -12V 3 D S 2 RDS(on) = 0.
05Ω Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporat...






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