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IRLML6401

International Rectifier
Part Number IRLML6401
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 19, 2005
Detailed Description PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Ava...
Datasheet PDF File IRLML6401 PDF File

IRLML6401
IRLML6401

Overview
PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.
1mm) Available in Tape and Reel Fast Switching 1.
8V Gate Rated HEXFET® Power MOSFET G 1 VDSS = -12V 3 D S 2 RDS(on) = 0.
05Ω Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best available.
Micro3  Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy „ Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-12 -4.
3 -3.
4 -34 1.
3 0.
8 0.
01 33 ± 8.
0 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Typ.
75 Max.
100 Units °C/W www.
irf.
com 1 04/29/03 IRLML6401 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss ...


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