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IRLML6401

HOTTECH
Part Number IRLML6401
Manufacturer HOTTECH
Description Power MOSFET
Published Jul 11, 2017
Detailed Description Plastic-Encapsulate Mosfets IRLML6401 l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<...
Datasheet PDF File IRLML6401 PDF File

IRLML6401
IRLML6401

Overview
Plastic-Encapsulate Mosfets IRLML6401 l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.
1mm) l Available in Tape and Reel l Fast Switching l 1.
8V Gate Rated l Lead-Free l Halogen-Free l Marking: 1F * 6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor EAS VGS TJ, TSTG Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambientƒ Power MOSFET VDSS = -12V ' RDS(on) = 0.
05Ω Max.
-12 -4.
3 -3.
4 -34 1.
3 0.
8 0.
01 33 ± 8.
0 -55 to + 150 Typ.
75 Max.
100 Units V A W W/°C mJ V °C Units °C/W Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ...


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