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IRLML6402

International Rectifier
Part Number IRLML6402
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 19, 2005
Detailed Description l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fa...
Datasheet PDF File IRLML6402 PDF File

IRLML6402
IRLML6402


Overview
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.
1mm) l Available in Tape and Reel l Fast Switching G1 S2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
The thermal resistance a...



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