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HY57V561620

4Banks x 4M x 16Bit Synchronous DRAM

Description

HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a positi...

Hynix Semiconductor

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