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HY57V561620

Part Number	HY57V561620
Manufacturer	Hynix Semiconductor
Description	4Banks x 4M x 16Bit Synchronous DRAM
Published	Jan 4, 2006
Detailed Description	HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous D...
Datasheet	HY57V561620 PDF File

Overview

HY57V561620(L)T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V561620 is organized as 4 banks of 4,194,304x16.
The HY57V561620T is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline ( CAS latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave).
A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst re...

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