DataSheet.
in
TENTATIVE
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
2SK3563
unit:mm
Switching
Regulator Applications
10±0.
3
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 -55~150 A W mJ A mJ °C °C Unit
0.
69±0.
15
2.
8Max
V V V
2.
54±0.
25 0.
64±0.
15 2.
54±0.
25 2.
6
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1.
2.
3...