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P Channel Enchancement Mode MOSFET -2.
8A DESCRIPTION
ST2301
The ST2301 is the P-Channel logic enhancement mode power field effect
transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z -20V/-2.
8A, RDS(ON) = 120m-ohm @VGS = -4.
5V z -20V/-2.
0A, RDS(ON) = 170m-ohm @VGS = -2.
5V z Super high ...