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ST2301A

Stanson Technology
Part Number ST2301A
Manufacturer Stanson Technology
Description P Channel Enhancement Mode MOSFET
Published Oct 14, 2009
Detailed Description P Channel Enhancement Mode MOSFET ST2301A -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power fiel...
Datasheet PDF File ST2301A PDF File

ST2301A
ST2301A

Overview
P Channel Enhancement Mode MOSFET ST2301A -3.
0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 FEATURE z 3 D G 1 1.
Gate 2.
Source S 2 3.
Drain z z z z -20V/-2.
8A, RDS(ON) = 80mΩ (Typ.
) @VGS = -4.
5V -20V/-2.
0A, RDS(ON) = 120mΩ @VGS = -2.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING SOT-23 www.
DataSheet4U.
com 3 S01YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST2301SRG Package SOT-23 ...


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