|
Part Number
|
TIM1414-7 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
MICROWAVE POWER GaAs FET |
|
Published
|
Jul 30, 2006 |
|
Detailed Description
|
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 38.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN
G1dB= 6.5dB at 14...
|
|
Datasheet
|
TIM1414-7
|
Overview
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 38.
5dBm at 14.
0GHz to 14.
5GHz ･HIGH GAIN
G1dB= 6.
5dB at 14.
0GHz to 14.
5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-7
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS
VDS= 9V IDSset= 2.
0A f= 14.
0 to 14.
5GHz
UNIT dBm dB
A
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN.
37.
5 5.
5
TYP.
MAX.
38.
5
6.
5
2.
25 2.
75
27
80
ELECTRICAL CHARACTERISTICS...
Similar Datasheet