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TIM1414-18L

Toshiba
Part Number TIM1414-18L
Manufacturer Toshiba
Description Microwave Power GaAs FET
Published Jul 30, 2006
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14...
Datasheet PDF File TIM1414-18L PDF File

TIM1414-18L
TIM1414-18L

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
5dBm at 14.
0GHz to 14.
5GHz ･HIGH GAIN G1dB= 6.
0dB at 14.
0GHz to 14.
5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -25dBc at Pout= 36.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-18L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.
4A f = 14.
0 to 14.
5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 36.
0dBm, f= 5M...


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