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TIM1414-15L

Toshiba
Part Number TIM1414-15L
Manufacturer Toshiba
Description Microwave Power GaAs FET
Published Jul 30, 2006
Detailed Description MICROWAVE POWER GaAs FET TIM1414-15L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 14.0GHz to...
Datasheet PDF File TIM1414-15L PDF File

TIM1414-15L
TIM1414-15L

Overview
MICROWAVE POWER GaAs FET TIM1414-15L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.
0dBm at 14.
0GHz to 14.
5GHz ŋHIGH GAIN G1dB= 6.
0dB at 14.
0GHz to 14.
5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min.
) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.
0A f= 14.
0 to 14.
5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test...


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