com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 33.
5 dBm at 14.
0 GHz to 14.
5 GHz • High gain - G1dB = 6.
5 dB at 14.
0 GHz to 14.
5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.
0 - 14.
5 GHz A % °C – – – 0.
85 23 – 1.
1 – 60 Condition Unit dBm dB Min.
32.
5 5.
5 Typ.
33.
5 6.
5 Max – – TIM1414-2 DataShee Electrical Characteristics (Ta = 25°...

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