Part Number
|
2N7002M |
Manufacturer
|
Jiangsu Changjiang Electronics |
Description
|
MOSFET |
Published
|
May 21, 2007 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M
DESCRIPTION
High cell d...
|
Datasheet
|
2N7002M
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M
DESCRIPTION
High cell density, DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
1.
GATE 2.
SOURCE 3.
DRAIN
MOSFET( N-Channel )
D
WBFBP-03B
(1.
2×1.
2×0.
5) unit: mm
TOP
G D
S
BACK
S
G
FEATURES
High density cell design...
Similar Datasheet