AO4806 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.
8V to 12V.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications).
AO4806L is a Green Product ordering option.
AO4806 and AO4806L are electrically identical.
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
Features
VDS (V) = 20V ID = 9.
4A (VGS = 10V) RDS(ON) 14m Ω (VGS = 10V) RDS(ON) 15m Ω (VGS ...