DatasheetsPDF.com

AO4803

Alpha & Omega Semiconductors
Part Number AO4803
Manufacturer Alpha & Omega Semiconductors
Description Dual P-Channel MOSFET
Published Jun 4, 2007
Detailed Description AO4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4803 uses advanced trench techn...
Datasheet PDF File AO4803 PDF File

AO4803
AO4803

Overview
AO4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4803 is Pb-free (meets ROHS & Sony 259 specifications).
AO4803L is a Green Product ordering option.
AO4803 and AO4803L are electrically identical.
Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.
5V) SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 www.
DataSheet4U.
com G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.
2 -20 2 1.
4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4803 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.
5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=5.
0A TJ=125°C 6 -1 -20 39 54 67 8.
6 -0.
77 52 70 87 -1 -2.
8 -1.
8 Min -30 -1 -5 ±100 -3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)