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Part Number
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IRF7338 |
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Manufacturer
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International Rectifier |
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Description
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HEXFET Power MOSFET |
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Published
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Jul 2, 2007 |
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Detailed Description
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PD - 94372C
IRF7338
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Ava...
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|
Datasheet
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IRF7338
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Overview
PD - 94372C
IRF7338
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
D1 D1
N-Ch VDSS 12V
P-Ch -12V
3
6
D2 D2
4
5
P-CHANNEL MOSFET
RDS(on) 0.
034Ω 0.
150Ω
Top View
Description
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die cap...
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