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Part Number
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IRF7328 |
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Manufacturer
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International Rectifier |
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Description
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HEXFET Power MOSFET |
|
Published
|
Jul 10, 2007 |
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Detailed Description
|
PD -94000
IRF7328
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Availab...
|
|
Datasheet
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IRF7328
|
Overview
PD -94000
IRF7328
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel
VDSS
-30V
RDS(on) max
21mΩ@VGS = -10V 32mΩ@VGS = -4.
5V
ID
-8.
0A -6.
8A
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
3
6
4
5
T o p V ie w
SO-8
com
Abs...
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