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C5198

Part Number C5198
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Dec 13, 2007
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High break...
Datasheet C5198





Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under hea...






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