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C5110

Toshiba
Part Number C5110
Manufacturer Toshiba
Description 2SC5110
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum R...
Datasheet PDF File C5110 PDF File

C5110
C5110

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 30 60 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
JEDEC ― operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the JEITA TOSHIBA SC-70 2-2E1A Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual Weight: 6 mg (typ.
) reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2010-04-14 2SC5110 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz Cob Cre Cc･rbb’ VCB = 5 V, IE = 0, f = 1 MHz (Note 2) VCB = 5 V, IC = 3 mA, f = 30 MHz ⎯ ⎯ 80 3 6 ⎯ ⎯ ⎯ ⎯ 1 μA ⎯ 1 μA ⎯ 240 ⎯ 5 ⎯ GHz 10 ⎯ dB 0.
9 ⎯ pF 0.
7 1.
1 pF 6 15 ps Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking 2 2010-04-14 2SC5110 3 2010-04-14 2SC5110 S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 5 V, IC = 5 mA Frequency (MHz) 200 400 6...


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