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C5106

Toshiba
Part Number C5106
Manufacturer Toshiba
Description 2SC5106
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 2SC5106 For VCO Application Absolute Maximum Ratings (Ta...
Datasheet PDF File C5106 PDF File

C5106
C5106

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 2SC5106 For VCO Application Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 15 30 150 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) 1 2010-01-26 2SC5106 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant Symbol Test Condition Min ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz Cob Cre Cc･rbb’ VCB = 5 V, IE = 0, f = 1 MHz (Note 2) VCB = 5 V, IC = 3 mA, f = 30 MHz ⎯ ⎯ 80 4 7 ⎯ ⎯ ⎯ Typ.
⎯ ⎯ ⎯ 6 11 0.
75 0.
55 6 Max 1 1 240 ⎯ ⎯ ⎯ 0.
95 15 Unit μA μA GHz dB pF pF ps Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking 2 2010-01-26 2SC5106 3 2010-01-26 2SC5106 S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 5 V, IC = 5 mA Frequency (MHz) 200 4...


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