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C5100

Sanken electric
Part Number C5100
Manufacturer Sanken electric
Description Silicon NPN Transistor
Published Mar 6, 2014
Detailed Description 2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C) S...
Datasheet PDF File C5100 PDF File

C5100
C5100

Overview
2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5100 10max 10max 120min 50min∗ 0.
5max 20typ 200typ V MHz 16.
2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.
3A VCE=12V, IE=–0.
5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.
8±0.
2 15.
6±0.
2 5.
5±0.
2 3.
45 ±0.
2 5.
5 ø3.
3±0.
2 1.
6 Unit µA 23.
0±0.
3 V 9.
5±0.
2 µA a b pF 1.
75 2.
15 1.
05 +0.
2 -0.
1 5.
45±0.
1 1.
5 4.
4 5.
45±0.
1 1.
5 0.
65 +0.
2 -0.
1 3.
3 0.
8 O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 40 RL (Ω) 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
4 IB2 (A) –0.
4 ton (µs) 0.
13typ tstg (µs) 3.
50typ tf (µs) 0.
32typ 3.
35 B C E Weight : Approx 6.
5g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) 350m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 8 (V C E =4V) A 8 0m 20 15 0m A A 1 A 00m 75 m A Collector Current I C (A) 2 50m A Collector Current I C (A) 6 6 4 4 mp) mp) Cas ˚C ( 2 2 (Cas I B =10mA I C =8A 0 2A 0.
6 4A 0.
8 1.
0 0 0 0 0 1 2 3 4 0 0.
2 0.
4 0.
5 –30˚C 25˚C 125 (Case 1 e Te 20mA e Te Temp 1.
0 ) Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =4V) 200 DC C urrent G ain h FE h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 125˚C DC Curr ent Gain h FE θ j- a ( ˚C/W) θ j-a – t Characteristics 4 Typ 100 100 25˚C –30˚C Transient Thermal Resistance 1 50 50 0.
5 20 0.
02 0.
1 0.
5 1 5 8 20 0.
02 0.
1 0.
5 1 5 8 0.
2 1 10 100 Time t(ms) 1000 20...


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