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C5103

ROHM Electronics
Part Number C5103
Manufacturer ROHM Electronics
Description 2SC5103
Published Apr 22, 2009
Detailed Description www.datasheet4u.com 2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (T...
Datasheet PDF File C5103 PDF File

C5103
C5103

Overview
www.
datasheet4u.
com 2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ.
0.
15V at IC / IB = 3 / 0.
15A) 2) High speed switching (tf : Typ.
0.
1 µs at IC = 3A) 3) Wide SOA.
(safe operating area) 4) Complements the 2SA1952.
!External dimensions (Units : mm) 0.
75 5.
5 1.
5 (3) (2) (1) 2.
3 0.
9 0.
9 0.
65 2.
3 5.
1 6.
5 C0.
5 1.
0 0.
5 0.
5 1.
5 2.
5 9.
5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms ROHM : CPT3 EIAJ : SC-63 Unit V V V A(DC) A(Pulse) ∗ W W(Tc=25°C) °C °C Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 60 5 5 10 1 10 150 −55~+150 !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5103 CPT3 PQ TL 2500 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time ∗ Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf Min.
100 60 5 − − − − − − 82 − − − − − Typ.
− − − − − 0.
15 − − − − 120 80 − − 0.
1 Max.
− − − 10 10 0.
3 0.
5 1.
2 1.
5 270 − − 0.
3 1.
5 0.
3 Unit V V V µA µA V V V V − MHz pF µs µs µs Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 100V VEB = 5V IC/IB = 3A/0.
15A IC/IB = 4A/0.
2A IC/IB = 3A/0.
15A IC/IB = 4A/0.
2A VCE/IC = 2V/1A VCB = 10V , IE = 0.
5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10Ω IB1 = −IB2 = 0.
15A VCC 30V ∗ ∗ ∗ ∗ ∗ 2.
3 0.
8Min.
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ...


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