Part Number
|
WFF830 |
Manufacturer
|
Wisdom technologies |
Description
|
N-Channel MOSFET |
Published
|
Jun 24, 2008 |
Detailed Description
|
Wisdom Semiconductor
WFF830
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.4 Ω )@VGS=10V
Symbol
◀
{
2. Drain
Gate C...
|
Datasheet
|
WFF830
|
Overview
Wisdom Semiconductor
WFF830
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.
4 Ω )@VGS=10V
Symbol
◀
{
2.
Drain
Gate Charge (Typical 25nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.
DataSheet4U.
com ■ Maximum Junction Temperature Range (150°C)
●
1.
Gate {
▲
● ●
{
3.
Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, ...
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