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WFF8N80

Wisdom technologies
Part Number WFF8N80
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Feb 1, 2016
Detailed Description Wisdom Semiconductor WFF8N80 N-Channel MOSFET Features ■ RDS(on) (Max 1.6 Ω )@VGS=10V ■ Gate Charge (Typical 39nC) ■ ...
Datasheet PDF File WFF8N80 PDF File

WFF8N80
WFF8N80

Overview
Wisdom Semiconductor WFF8N80 N-Channel MOSFET Features ■ RDS(on) (Max 1.
6 Ω )@VGS=10V ■ Gate Charge (Typical 39nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1.
Gate{ { 2.
Drain ● ◀▲ ● ● { 3.
Source TO-220F 123 Absolute Maximum Ratings *( Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 1) (Note 2) (Note 1) (Note 3) Value 800 8.
0* 5.
0* 32* ±30 850 17.
8 4.
5 59 0.
48 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min.
- Value Typ.
- Max.
2.
1 62.
5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W Copyright@Wisdom Semiconductor Inc.
, All rights reserved.
WFF8N80 Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics Test Conditions VGS =...


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