WTC2301 P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT -2.
3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) 100mΩ @V GS =-4.
5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 2 SOURCE 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θ JA R θJC Ta Tc TJ T stg Value -20 ±8 -2.
3 -8 0.
9 0.
57 140 100 150 150 150 -55~+150 Unit V A A W ˚C /W...

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