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WTC2304

Weitron Technology
Part Number WTC2304
Manufacturer Weitron Technology
Description Enhancement Mode Power MOSFET
Published Sep 10, 2008
Detailed Description WTC2304 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.7 AMPERS DRAIN SOUCE V...
Datasheet PDF File WTC2304 PDF File

WTC2304
WTC2304

Overview
WTC2304 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.
7 AMPERS DRAIN SOUCE VOLTAGE 25 VOLTAGE www.
DataSheet4U.
com Features: 2 SOURCE 3 1 2 *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V *Rugged and Reliable Application: *Capable of 2.
5V Gate Drive *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@4.
5V(TA ,VGS@4.
5V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R JA Value 20 ±12 3.
2 2.
6 10 1.
38 90 -55~+150 Unit V A W ℃/W ℃ Operating Junction and Storage Temperature Range TJ, Tstg Device Marking WTC2302=2302 http:www.
weitron.
com.
tw WEITRON 1/6 09-May-05 WTC2302 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250μA www.
DataSheet4U.
com Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±12V Drain-Source Leakage Current(Tj=25℃) VDS=20V,VGS=0 Drain-Source Leakage Current(Tj=70℃) VDS=20V,VGS=0 Drain-Source On-Resistance VGS=4.
5V,ID=3.
6A VGS=2.
5V,ID=3.
1A Forward Transconductance VDS=5V,ID=3.
6A gfs RDS(on) 6 85 115 mΩ IDSS 10 V(BR)DSS VGS(Th) IGSS 20 0.
5 V 1.
2 ±100 1 μA nA S Dynamic Input Capacitance VGS=0V,VDS=10V,f=1.
0MHz Output Capacitance VGS=0V,VDS=10V,f=1.
0MHz Reverse Transfer Capacitance VGS=0V,VDS=10V,f=1.
0MHz Ciss Coss Crss 145 100 50 pF http:www.
weitron.
com.
tw WEITRON 2/6 09-May-05 WTC2302 Switching Turn-on Delay Time2 VDS=10V,VGS=5V,ID=3.
6A,RD=2.
8Ω,RG=6Ω Rise Time VDS=10V,VGS=5V,ID=3.
6A,RD=2.
8Ω,RG=6Ω Turn-off Delay Time VDS=10V,VGS=5V,ID=3.
6A,RD=2.
8Ω,RG=6Ω www.
DataSheet4U.
com Fall Time VDS=10V,VGS=5V,ID=3.
6A,RD=2.
8Ω,RG=6Ω Total Gate Charge2 VDS=10V,VGS=4.
5V,ID=3.
6A Gate-Source Charge VDS=10V,VGS=4.
5V,ID=3.
6A Gate-Drain Change VDS=10V,VGS=4.
5V,ID=3.
6A td(o...


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